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| PD - 95212A IRF7809AVPBF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications * 100% Tested for Rg * Lead-Free Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7809AV has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7809AV offers particulary low RDS(on) and high Cdv/dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. * * * * * A A D D D D S S S G 1 2 3 4 8 7 6 5 SO-8 Top View DEVICE CHARACTERISTICS IRF7809AV RDS(on) QG Qsw Qoss 7.0m 41nC 14nC 30nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS 4.5V) Pulsed Drain Current Power Dissipation TA = 25C TL = 90C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead RJA RJL Max. 50 20 Units C/W C/W TJ, TSTG IS ISM TA = 25C TL = 90C IDM PD Symbol VDS VGS ID IRF7809A V 30 12 13.3 14.6 100 2.5 3.0 -55 to 150 2.5 50 C A W A Units V 08/23/05 IRF7809AVPBF Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage Static Drain-Source on Resistance Gate Threshold Voltage Drain-Source Leakage Current BVDSS RDS(on) VGS(th) IDSS 1.0 30 150 IGSS QG QG QGS1 QGS2 QGD Qsw Qoss RG td (on) tr td (off) tf Ciss Coss - - Crss Min VSD Qrr Qrr(s) 120 150 41 36 7.0 2.3 12 14 30 1.5 14 36 96 10 3780 1060 - - - 130 pF - VDS = 16V, VGS = 0 ns 21 45 3.0 VDD = 16V, ID = 15A VGS = 5V Clamped Inductive Load VDS = 16V, V GS = 0 nC ID=15A, V DS=16V 100 62 54 A nA Min 30 Typ - 7.0 Max - 9.0 Units V m V Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 15A VDS = VGS,ID = 250A VDS = 24V, V GS = 0 VDS = 24V, VGS = 0, Tj = 100C Gate-Source Leakage Current* Total Gate Chg Cont FET Total Gate Chg Sync FET Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Chg(Qgs2 + Qgd) Output Charge* Gate Resistance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance VGS = 12V VGS=5V, ID=15A, VDS =20V VGS = 5V, VDS< 100mV VDS = 20V, ID = 15A Current* Reverse Transfer Capacitance Source-Drain Rating & Characteristics Parameter Diode Forward Voltage* Reverse Recovery Charge Reverse Recovery Charge (with Parallel Schottky) Typ Max 1.3 Units V nC nC Conditions IS = 15A, VGS = 0V di/dt ~ 700A/s VDS = 16V, VGS = 0V, IS = 15A di/dt = 700A/s (with 10BQ040) VDS = 16V, VGS = 0V, IS = 15A Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400 s; duty cycle 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Qoss Typical values measured at VGS = 4.5V, IF = 15A. 2 www.irf.com IRF7809AVPBF 1000 VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP 1000 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP 100 100 2.5V 20s PULSE WIDTH TJ = 150 C 1 10 100 2.5V 10 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 10 0.1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 15A I D , Drain-to-Source Current (A) 1.5 100 1.0 TJ = 150 C TJ = 25 C V DS = 15V 20s PULSE WIDTH 2.6 2.8 3.0 3.2 3.4 0.5 10 2.4 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7809AVPBF 6000 5000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10 ID = 15A VDS = 20V 8 C, Capacitance (pF) 4000 Ciss 3000 6 4 2000 Coss 1000 2 0 Crss 1 10 100 0 VDS , Drain-to-Source Voltage (V) 0 10 20 30 40 50 60 70 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 C ID , Drain Current (A) 100 100 10us 10 100us TJ = 25 C 1 10 1ms 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 2.2 VSD ,Source-to-Drain Voltage (V) 1 0.1 TA = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7809AVPBF 16 VDS V GS RD ID , Drain Current (A) 12 RG 10V D.U.T. + - VDD 8 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 4 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 100 D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 PDM t1 0.1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t2 Thermal Response (Z thJA ) 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7809AVPBF RDS (on) , Drain-to-Source On Resistance () 0.008 R DS(on) , Drain-to -Source On Resistance ( ) 0.012 VGS = 4.5V 0.007 0.010 0.006 VGS = 10V 0.008 ID = 15A 0.005 0 20 40 60 80 100 120 ID , Drain Current (A) 0.006 2.5 3.0 3.5 4.0 4.5 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50K 12V .2F .3F VGS QGS D.U.T. + V - DS QG QGD 500 VG EAS , Single Pulse Avalanche Energy (mJ) VGS 3mA TOP 400 Charge IG ID BOTTOM ID 6.7A 9.5A 15A Current Sampling Resistors Fig 13a&b. Basic Gate Charge Test Circuit and Waveform 300 200 15V V(BR)DSS tp VDS L 100 DRIVER RG 20V D.U.T IAS + V - DD 0 A 25 50 75 100 125 150 I AS tp 0.01 Starting TJ , Junction Temperature ( C) Fig 14a&b. Unclamped Inductive Test circuit and Waveforms Fig 14c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF7809AVPBF SO-8 Package Outline Dimensions are shown in milimeters (inches) 9 6 ' & ! % " $ $ # 7 9DH 6 6 i p 9 @ r r C F G DI8C@T HDI H6Y $"! %'' # (' ! " &$ (' (%' '( #(& $&# $AA76TD8 !$AA76TD8 !!'# !## (( (% % $ A' A HDGGDH@U@ST HDI H6Y "$ &$ !$ "" $ ( !$ #' $ "' # !&AA76TD8 %"$AA76TD8 $' %! !$ $ # !& A A' % @ C !$Ab dA 6 %Y r r 6 FAA#$ 8 Ab#dA 'YAG & 'YAp 'YAi !$Ab dA 6 867 IPU@T) AA9DH@ITDPIDIBAEAUPG@S6I8DIBAQ@SA6TH@A #$H ((# !AA8PIUSPGGDIBA9DH@ITDPI)AHDGGDH@U@S "AA9DH@ITDPITA6S@ATCPXIADIAHDGGDH@U@STAbDI8C@Td #AAPVUGDI@A8PIAPSHTAUPAE@9@8APVUGDI@AHT !66 $AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A $Ab%d %AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A!$Ab d &AAA9DH@ITDPIADTAUC@AG@IBUCAPAAG@69AAPSATPG9@SDIBAUP AAAAA6ATV7TUS6U@ APPUQSDIU 'YA&!Ab!'d %#%Ab!$$d "YA !&Ab$d 'YA &'Ab&d SO-8 Part Marking Information @Y6HQG@)AUCDTADTA6IADSA& AHPTA@U 96U@A8P9@AXX QA2A9@TDBI6U@TAG@69AS@@ QSP9V8UAPQUDPI6G A2AG6TUA9DBDUAPAAUC@A@6S XXA2AX@@F 6A2A6TT@H7GATDU@A8P9@ GPUA8P9@ Q6SUAIVH7@S 7 DIU@SI6UDPI6G S@8UDAD@S GPBP www.irf.com ;;;; ) IRF7809AVPBF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/05 8 www.irf.com |
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